Characteristics of a Smiling Polysilicon Thin-Film Transistor

被引：7

作者：

Lin, Jyi-Tsong ^{[1
]}

Chang, Tzu-Feng ^{[1
]}

Eng, Yi-Chuen ^{[1
]}

Lin, Po-Hsieh ^{[1
]}

Chen, Cheng-Hsin ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 06期

关键词：

Data retention time; programming window; system on panel (SOP); thin-film transistor (TFT); one-transistor dynamic random access memory (1T-DRAM); THRESHOLD VOLTAGE;

D O I：

10.1109/LED.2012.2191262

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One-transistor dynamic random access memory (1T-DRAM) thin-film transistor (TFT) could lead the revolution of system-on-panel application. However, no useful 1T-DRAM is fabricated on the polysilicon (poly-Si) thin film up to now. In this letter, we present a novel method to fabricate a smiling poly-Si TFT for 1T-DRAM applications. The experimental results show that the short-channel effects can be reduced because the smiling scheme is used to suppress the charge sharing and the source/drain-tied scheme can help to overcome the self-heating. Moreover, the device fabrication is fully compatible with current complementary metal-oxide-semiconductor (CMOS) technology.

引用

页码：830 / 832

页数：3

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