OSCILLATOR STRENGTH AND OPTICAL SELECTION RULE OF EXCITONS IN QUANTUM WELLS

被引:57
|
作者
ZHU, BF [1 ]
机构
[1] CHINESE ACAD SCI,INST SEMICOND,BEIJING,PEOPLES R CHINA
来源
PHYSICAL REVIEW B | 1988年 / 37卷 / 09期
关键词
D O I
10.1103/PhysRevB.37.4689
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4689 / 4693
页数:5
相关论文
共 50 条
  • [1] OSCILLATOR STRENGTH OF EXCITONS IN QUANTUM-WELLS
    MATSUURA, M
    KAMIZATO, T
    SURFACE SCIENCE, 1986, 174 (1-3) : 183 - 187
  • [2] OSCILLATOR STRENGTH OF EXCITONS IN INGAAS/GAAS QUANTUM-WELLS
    ZHANG, BP
    KANO, SS
    SHIRAKI, Y
    ITO, R
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1993, 62 (09) : 3031 - 3034
  • [3] REFLECTANCE STUDY OF THE OSCILLATOR STRENGTH OF EXCITONS IN SEMICONDUCTOR QUANTUM-WELLS
    ZHANG, BP
    KANO, SS
    SHIRAKI, Y
    ITO, R
    PHYSICAL REVIEW B, 1994, 50 (11): : 7499 - 7508
  • [4] Oscillator strength of higher-subband excitons in InGaAs/GaAs quantum wells
    Zhang, Baoping, 1600, Institute of Physics Publishing Ltd, Bristol, United Kingdom (10):
  • [5] OSCILLATOR STRENGTH OF HIGHER-SUBBAND EXCITONS IN INGAAS/GAAS QUANTUM-WELLS
    ZHANG, BP
    KANO, SS
    ITO, R
    SHIRAKI, Y
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (04) : 443 - 446
  • [6] The effect of AlAs submonolayer insertion on the oscillator strength of excitons in GaAs/AlGaAs quantum wells
    Mejri, C.
    Chaouache, M.
    Maaref, M.
    Voisin, P.
    Gerard, J. M.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (08) : 1018 - 1021
  • [7] Oscillator strength of excitons in (In,Ga)As/GaAs quantum wells in the presence of a large electric field
    Monier, C
    Freundlich, A
    Vilela, MF
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) : 2713 - 2718
  • [8] OPTICAL SPECTROSCOPY OF EXCITONS IN QUANTUM WELLS
    ESAKI, L
    VINA, L
    MENDEZ, EE
    CHANG, LL
    JOURNAL OF LUMINESCENCE, 1988, 40-1 : 12 - 16
  • [9] Oscillator strength of optical transitions in InGaAsN/GaAsN/GaAs quantum wells
    Mika, Arkadiusz
    Sek, Grzegorz
    Ryczko, Krzysztof
    Kozub, Michal
    Musial, Anna
    Marynski, Aleksander
    Misiewicz, Jan
    Langer, Fabian
    Hoefling, Sven
    Appel, Teresa
    Kamp, Martin
    Forchel, Alfred
    OPTICA APPLICATA, 2013, 43 (01) : 53 - 60
  • [10] Optical properties of interacting excitons in quantum wells
    de-Leon, S
    Laikhtman, B
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 557 - 558