MONTE-CARLO PARTICLE SIMULATION OF A GAAS SHORT-CHANNEL MESFET

被引：25

作者：

AWANO, Y ^{[1
]}

TOMIZAWA, K ^{[1
]}

HASHIZUME, N ^{[1
]}

KAWASHIMA, M ^{[1
]}

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 01期

关键词：

D O I：

10.1049/el:19830014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：20 / 21

页数：2

共 50 条

[41] MONTE-CARLO SIMULATION OF WATER-STRUCTURE IN THE MALONYLGRAMICIDIN CHANNEL
VERESOV, VG
BIOLOGICHESKIE MEMBRANY, 1986, 3 (10): : 1062 - 1068
[42] EVALUATION OF PARTICLE RELAXATION-TIMES FOR DEVICE SIMULATION OF SUBMICROMETER GAAS DEVICES USING ENSEMBLE MONTE-CARLO SIMULATION
YAMADA, Y
ELECTRONICS LETTERS, 1993, 29 (01) : 59 - 60
[43] MONTE-CARLO SIMULATION OF SI AND GAAS AVALANCHE ELECTRON EMITTING DIODES
HIGMAN, JM
KIM, K
HESS, K
VANZUTPHEN, T
BOOTS, HMJ
JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) : 1384 - 1386
[44] MODELING DEGENERACY FOR MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT IN GAAS
YAMADA, Y
ELECTRONICS LETTERS, 1991, 27 (08) : 679 - 680
[45] MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN GAAS INCLUDING QUANTUM EFFECTS
CHANG, YC
TING, DZY
TANG, JY
HESS, K
APPLIED PHYSICS LETTERS, 1983, 42 (01) : 76 - 78
[46] CHANNELING IN GAAS - A MONTE-CARLO SIMULATION OF LOW-ENERGY IMPLANTS
GAROFALO, F
MAZZONE, AM
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 98 (02): : 517 - 520
[47] ANALYSIS OF DEFECTS IN WEAKLY DAMAGED GAAS BY MONTE-CARLO CHANNELING SIMULATION
DYGO, A
KACZANOWSKI, J
TUROS, A
WESCH, W
GARTNER, K
GOTZ, G
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 64 (1-4): : 721 - 723
[48] MODELING FOR AN ALGAAS/GAAS HETEROSTRUCTURE DEVICE USING MONTE-CARLO SIMULATION
TOMIZAWA, M
YOSHII, A
YOKOYAMA, K
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 332 - 334
[49] MONTE-CARLO SIMULATION OF ALGAAS/GAAS HOT-ELECTRON TRANSISTORS
IMANAGA, S
KAWAI, H
KANEKO, K
WATANABE, N
JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) : 3281 - 3288
[50] MONTE-CARLO SIMULATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
TOMIZAWA, K
AWANO, Y
HASHIZUME, N
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) : 362 - 364

← 1 2 3 4 5 →