IMPROVED 2ND BREAKDOWN OF INTEGRATED BIPOLAR POWER TRANSISTORS

被引：0

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作者：

VILLA, FF

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 12期

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D O I：

10.1109/T-ED.1986.22855

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1971 / 1976

页数：6

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