THIN FILMS OF ZINC OXIDE DOPED WITH ALUMINUM AND FLUORIDE PREPARED BY SOL-GEL

Thin films of zinc oxide doped with aluminum and fluoride, ZnO:Al:F which were manufactured by sol-gel process and repeated immersion technique. The films were deposited on soda-lime glass substrates. The effects of aging from the sun and the thickness of the films on the structure, morphology and optical and electrical properties of the films have been studied. The ZnO: Al: F at.% films were crystalline with a preferential orientation in the plane ( 002). It turned a crystal size for the films in the range of 18-39 nm. In the best films values of 5x10(-1) and 12x10(-1) Omega cm for the resistivity were registered. The films showed a transmittance of 75 to 85%. From the UV spectra of the films, a bandwidth of 3.31 to 3.34 eV was evaluated. The ZnO: Al: F at 0.5 at.% films, have such physical and chemical properties, that could be applied in solar cells thin film technology.