ANION-INDUCED SURFACE-STATES FOR THE IDEAL (100) FACES OF GAAS, ALAS AND GASB

被引:4
|
作者
PLATERO, G
SANCHEZDEHESA, J
TEJEDOR, C
FLORES, F
MUNOZ, A
机构
关键词
D O I
10.1016/0039-6028(86)90582-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:47 / 56
页数:10
相关论文
共 50 条
  • [42] SURFACE-STATES OF SODIUM IN DIRECTIONS (100) AND (111)
    GARRON, R
    SURFACE SCIENCE, 1980, 91 (01) : 358 - 364
  • [43] BOUND AND RESONANT SURFACE-STATES AT THE (110) SURFACES OF ALSB, ALAS, AND ALP
    BERES, RP
    ALLEN, RE
    BUISSON, JP
    BOWEN, MA
    BLACKWELL, GF
    HJALMARSON, HP
    DOW, JD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 548 - 550
  • [44] EXTRINSIC SURFACE-STATES FOR OXYGEN CHEMISORBED ON GAAS (110) SURFACE
    JOANNOPOULOS, JD
    MELE, EJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1287 - 1289
  • [45] A NON-ORTHOGONAL-BASIS CALCULATION OF THE SPECTRAL DENSITY OF SURFACE-STATES FOR THE (100) AND (110) FACES OF TUNGSTEN
    SANCHO, MPL
    SANCHO, JML
    RUBIO, J
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (09): : 1803 - 1815
  • [46] Surface-states effects on GaAs FET electrical performance
    Ohno, Y
    Francis, P
    Nogome, M
    Takahashi, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (01) : 214 - 219
  • [47] PASSIVATION OF SURFACE-STATES ON P-TYPE GAAS
    AHRENKIEL, RK
    KAZMERSKI, LL
    IRELAND, PJ
    WAGNER, RS
    PATTILLO, S
    DUNLAVY, D
    JERVIS, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : C234 - C234
  • [48] SURFACE-STATES AT CLEAN, CLEAVED GAAS(110) SURFACES
    MONCH, W
    CLEMENS, HJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1238 - 1243
  • [49] REDUCTION OF SURFACE-STATES ON GAAS BY THE PLASMA GROWTH OF OXYFLUORIDES
    AHRENKIEL, RK
    KAZMERSKI, LL
    IRELAND, PJ
    JAMJOUM, O
    RUSSELL, PE
    DUNLAVY, D
    WAGNER, RS
    PATTILLO, S
    JERVIS, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 434 - 437
  • [50] Surface-states effects on GaAs FET electrical performance
    NEC Corp, Ibaraki, Japan
    IEEE Trans Electron Devices, 1 (214-219):