SELF-ALIGNED GATE ALGAAS/GAAS HETEROSTRUCTURE FET CHARACTERISTICS AT CRYOGENIC TEMPERATURES

被引：0
|
作者：
CIRILLO, NC [1 ]
VOLD, PJ [1 ]
ARCH, DK [1 ]
机构：
[1] HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C428 / C428
页数：1
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