LOW ELECTRON-DENSITIES AND SPIN-DEPENDENT SCATTERING IN THE QUANTUM HALL REGIME IN SI-MOSFETS

被引：1
|
作者：
HEEMSKERK, R [1 ]
WANG, SL [1 ]
KLAPWIJK, TM [1 ]
机构：
[1] UNIV GRONINGEN,CTR MAT SCI,9747 AG GRONINGEN,NETHERLANDS
来源：
PHYSICA B | 1994年 / 194卷 / pt 1期
关键词：
D O I：
10.1016/0921-4526(94)90943-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The relaxation of edge channels in the quantum Hall regime is considerably different in Si-MOSFETs than in GaAs/AlGaAs heterostructures due to the different material properties. These differences are also of great importance at low carrier densities (10(15) m-2), where an isulating state occurs. Both phenomena have been studied in a Si-MOSFET modified with submicron gaps.
引用
收藏
页码：1227 / 1228
页数：2
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