PHOTOENHANCED MOCVD OF OXIDE-FILMS

被引：0

作者：

LANE, PA ^{[1
]}

UNVALA, BA ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT MAT,LONDON SW7 2BP,ENGLAND

来源：

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C231 / C231

页数：1

共 50 条

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[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 683 - 691
[2] SOLID SOURCE MOCVD FOR THE EPITAXIAL-GROWTH OF THIN OXIDE-FILMS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) : 788 - 792
[3] STRUCTURE OF ANODIC OXIDE-FILMS ON ALUMINUM - COMPOSITE OXIDE-FILMS
TAKAHASHI, H
[J]. JOURNAL OF ELECTRON MICROSCOPY, 1990, 39 (02): : 134 - 134
[4] MOCVD and plasma MOCVD of metal oxide films
[J]. 1600, Publ by Editions de Physique, Les Ulis, Fr (C5):
[5] STABILITY OF LIQUID OXIDE-FILMS
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STRATONO.VN
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[6] BREAKDOWN OF OXIDE-FILMS ON NICKEL
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : 1185 - 1190
[7] PHOTOENHANCED MOCVD OF PBZRXTI1-XO3 THIN-FILMS
SHIMIZU, M
SUGIYAMA, M
KATAYAMA, T
SHIOSAKI, T
[J]. APPLIED SURFACE SCIENCE, 1994, 79-80 (1-4) : 293 - 298
[8] ANODIC OXIDE-FILMS ON BERYLLIUM
SHEHATA, MT
KELLY, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C76 - C76
[9] NUCLEATION OF GROWING OXIDE-FILMS
LEE, AE
[J]. SURFACE SCIENCE, 1975, 47 (01) : 191 - 194
[10] ANODIC OXIDE-FILMS ON INSB
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[J]. SOVIET ELECTROCHEMISTRY, 1977, 13 (03): : 369 - 370