PHOTOENHANCED MOCVD OF PBZRXTI1-XO3 THIN-FILMS

Growth of PbZrxTi1-xO3 (PZT) thin films was performed by photoenhanced metalorganic chemical vapor deposition (MOCVD), using Pb(C2H5)4, Zr(O-t-C4H9)4, Ti(O-i-C3H7)4, NO2 and O3. When NO2 was used as an oxidizing gas, the observed photoirradiation effects were an increase in the growth rate, an increase in the Zr content in the films, a change in the ferroelectric properties and a decrease in leakage current densities. When O3 was used, an increase in the growth rate was also observed. When films were grown using O3 and UV + O3, the films showed better leakage current characteristics than the films grown using O2.