OBSERVATION OF OXYGEN IMPURITIES IN SINGLE-CRYSTAL SILICON BY MEANS OF INTERNAL-FRICTION

被引：4

|

作者：

LAM, CC

DOUGLASS, DH

机构：

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 1981年 / 44卷 / 3-4期

关键词：

D O I：

10.1007/BF00120776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：259 / 264

页数：6

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