PILEUP OF N-TYPE DOPANT IN SOI STRUCTURE AND ITS EFFECT ON N-WELL CONCENTRATION

被引：7
|
作者：
SATO, Y
IMAI, K
ARAI, E
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 02期
关键词：
D O I：
10.1149/1.2044118
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
It is shown that n-well concentration in thin silicon on insulator (SOI) structure decreases drastically due to the pileup of n-type dopant at the surface-SiO2/Si interface. A demonstrative process shows the n-well concentration decreases to 30% in a 0.1 mu m SOI, while that in a 1 mu m SOI decreases to 80%.
引用
收藏
页码：660 / 663
页数：4
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