PILEUP OF N-TYPE DOPANT IN SOI STRUCTURE AND ITS EFFECT ON N-WELL CONCENTRATION

被引：7

作者：

SATO, Y

IMAI, K

ARAI, E

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 02期

关键词：

D O I：

10.1149/1.2044118

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

It is shown that n-well concentration in thin silicon on insulator (SOI) structure decreases drastically due to the pileup of n-type dopant at the surface-SiO2/Si interface. A demonstrative process shows the n-well concentration decreases to 30% in a 0.1 mu m SOI, while that in a 1 mu m SOI decreases to 80%.

引用

页码：660 / 663

页数：4

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