OPTICAL AND PHYSICAL-PROPERTIES OF SPUTTERED SI-AL-O-N FILMS

被引:7
|
作者
KNOLL, RW [1 ]
HENAGER, CH [1 ]
机构
[1] PACIFIC NW LAB, RICHLAND, WA 99352 USA
关键词
D O I
10.1557/JMR.1992.1247
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Mechanical and optical properties and structural characteristics are described for Si : N films with Al and O additions (SixAl1-xOyN1-y) deposited by reactive RF diode sputtering on Si and SiO2 substrates. The thermal and intrinsic stress components, elastic stiffness, coefficient of thermal expansion (CTE), and refractive index were measured for films ranging in thickness from approximately 2-mu-m to 50-mu-m. Some structural and microstructural data were obtained using x-ray diffraction, optical and scanning-electron microscopy, and surface profilometry. Alloying Si : N with Al to form Si : Al : N greatly reduced the compressive intrinsic and total stress found in pure Si : N films on Si. Addition of O to the Si : Al : N moderately increased the intrinsic stress, decreased the elastic stiffness, and produced a smoother, more glassy (amorphous) film.
引用
收藏
页码:1247 / 1252
页数:6
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