GROWTH OF STRAINED-LAYER SEMICONDUCTOR-METAL-SEMICONDUCTOR HETEROSTRUCTURES

被引：31

|

作者：

TUNG, RT

GIBSON, JM

LEVI, AFJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 19期

关键词：

D O I：

10.1063/1.96998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1264 / 1266

页数：3

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