AN EMPIRICAL RELATION FOR SEMICONDUCTOR STRAINED-LAYER RELAXATION

被引：3

|

作者：

DODSON, BW

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 91卷 / 04期

关键词：

D O I：

10.1016/0022-0248(88)90135-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

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页码：649 / 651

页数：3

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