EFFECTS OF CHEMICAL SURFACE PASSIVATION ON THE LUMINESCENCE PROPERTIES OF GAAS

被引:0
|
作者
SKROMME, BJ [1 ]
SANDROFF, CJ [1 ]
YABLONOVITCH, E [1 ]
GMITTER, TJ [1 ]
机构
[1] BELL COMMUN RES,RED BANK,NJ 07701
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:A30 / A30
页数:1
相关论文
共 50 条
  • [21] Surface passivation of GaAs power FETs
    Tanaka, Tsuyoshi
    Furukawa, Hidetoshi
    Miyatsuji, Kazuo
    Ueda, Daisuke
    Materials Research Society Symposium - Proceedings, 1999, 573 : 239 - 246
  • [22] Surface passivation of GaAs MESFET's
    Charache, GW
    Akram, S
    Maby, EW
    Bhat, IB
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (11) : 1837 - 1842
  • [23] ON THE PASSIVATION OF GaAs SURFACE BY SULFIDE COMPOUNDS
    Ghita, R. V.
    Negrila, C. C.
    Cotirlan, C.
    Logofatu, C.
    DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 2013, 8 (03) : 1335 - 1344
  • [24] Lifetime measurements on Ge wafers for Ge/GaAs solar cells - chemical surface passivation
    Blondeel, A
    Clauws, P
    Depuydt, B
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (1-3) : 301 - 303
  • [25] Low-temperature metallorganic chemical vapour deposition of AlN for surface passivation of GaAs
    NEC Corp, Ibaraki, Japan
    Adv Mater Opt Electron, 3 (127-134):
  • [26] Low-temperature metalorganic chemical vapour deposition of AIN for surface passivation of GaAs
    Fujieda, S
    Mizuta, M
    Matsumoto, Y
    ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS, 1996, 6 (03): : 127 - 134
  • [27] COMPARISON OF SURFACE-PROPERTIES OF SODIUM SULFIDE AND AMMONIUM SULFIDE PASSIVATION OF GAAS
    BESSER, RS
    HELMS, CR
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (11) : 4306 - 4310
  • [28] Effects of Ar and H2 plasma treatment on the surface character and luminescence properties of GaAs substrates
    Wang, Yun-Hua
    Zhou, Lu
    Qiao, Zhong-Liang
    Gao, Xin
    Bo, Bao-Xue
    Faguang Xuebao/Chinese Journal of Luminescence, 2013, 34 (03): : 308 - 313
  • [29] EFFECTS OF DIELECTRIC PASSIVATION ON GAAS DEVICES
    HOU, LD
    LANTERI, JP
    DANZILIO, DM
    DECICCO, AD
    OLMSTED, PD
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : C220 - C220
  • [30] Sb and Bi passivation effects on GaAs
    Kuroda, N
    Ikoma, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (11): : 6248 - 6253