SIMULTANEOUS GROWTH OF RHOMBOHEDRAL AND AMORPHOUS BORON FILMS IN A LOW-PRESSURE B2H6+H2+HE PLASMA

被引:17
|
作者
KOMATSU, S
MORIYOSHI, Y
机构
关键词
D O I
10.1016/0022-0248(88)90219-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:560 / 570
页数:11
相关论文
共 50 条
  • [41] Modeling studies of the chemical vapor deposition of boron films from B2H6
    Lamborn, Daniel R.
    Snyder, David W.
    Xi, X. X.
    Redwing, Joan M.
    JOURNAL OF CRYSTAL GROWTH, 2007, 299 (02) : 358 - 364
  • [42] TRANSITION OF THE APPARENT ACTIVATION-ENERGY FOR THE GROWTH OF BORON FILMS AS A FUNCTION OF SUBSTRATE-TEMPERATURE IN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION FROM B2H6 + HE
    KOMATSU, S
    MORIYOSHI, Y
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1990, 23 (09) : 1244 - 1251
  • [43] Use of the hydrocarbon plasma of a low-pressure are discharge for deposition of highly adhesive a-C:H films
    Bugaev, SP
    Oskomov, KV
    Podkovyrov, VG
    Smaykina, SV
    Sochugov, NS
    SURFACE & COATINGS TECHNOLOGY, 2000, 135 (01): : 18 - 26
  • [44] B2H6 plasma doping with "in-situ He pre-amorphization"
    Sasaki, Y
    Jin, CG
    Tamura, H
    Mizuno, B
    Higaki, R
    Satoh, T
    Majima, K
    Sauddin, H
    Takagi, K
    Ohmi, S
    Tsutsui, K
    Iwai, H
    2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2004, : 180 - 181
  • [45] Patterning of metal oxide thin films using a H2/He atmospheric pressure plasma jet
    Sener, M. Emre
    Sathasivam, Sanjayan
    Palgrave, Robert
    Quesada Cabrera, Raul
    Caruana, Daren J.
    GREEN CHEMISTRY, 2020, 22 (04) : 1406 - 1413
  • [46] Crystallization characteristics in heavily B2H6-doped amorphous Si thin films
    Ahn, Ji-Su
    Joo, Seung-Ki
    Takaloo, Ashkan Vakilipour
    Kim, Soonduck
    Kim, Deok-kee
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 801 : 352 - 359
  • [47] Comparison of three optical diagnostic techniques for the measurement of boron atom density in a H2/B2H6 microwave plasma
    Aubert, X.
    Duluard, C. Y.
    Sadeghi, N.
    Gicquel, A.
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 2017, 26 (11):
  • [48] Improvement of the Young's modulus of SiC film by low-pressure chemical vapor deposition with B2H6 gas
    Murooka, K
    Higashikawa, I
    Gomei, Y
    APPLIED PHYSICS LETTERS, 1996, 69 (01) : 37 - 39
  • [49] LOW-PRESSURE MICROWAVE ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION OF AMORPHOUS TA2O5 FILMS
    LAVIALE, D
    OBERLIN, JC
    DEVINE, RAB
    APPLIED PHYSICS LETTERS, 1994, 65 (16) : 2021 - 2023
  • [50] THE EFFICACY OF HEATING LOW-PRESSURE H-2 IN A MICROWAVE-DISCHARGE
    MORIN, TJ
    HAWLEY, MC
    PLASMA CHEMISTRY AND PLASMA PROCESSING, 1987, 7 (02) : 181 - 199