RELATIONSHIPS BETWEEN SPEED AND TOLERANCES FOR SELF-ELECTRO-OPTIC-EFFECT DEVICES

被引:14
|
作者
LENTINE, AL [1 ]
TOOLEY, FAP [1 ]
机构
[1] HERIOT WATT UNIV, EDINBURGH EH14 4AS, MIDLOTHIAN, SCOTLAND
来源
APPLIED OPTICS | 1994年 / 33卷 / 08期
关键词
D O I
10.1364/AO.33.001354
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We describe a method of calculating the relationship between system bit rates and tolerances to variations in optical powers for self-electro-optic-effect devices (SEED's). We show that high-contrast-ratio devices have improved bit rates in the presence of optical-power variations even for differential devices. We also calculate the ratios of control-beam to signal-beam powers and transfer-beam to clock-beam powers for logic SEED switching nodes and shift registers. Last, we show that the bit rate of optoelectronically cascaded devices, such as the logic SEED shift register, is comparable with that of optically cascaded symmetric SEED's.
引用
收藏
页码:1354 / 1367
页数:14
相关论文
共 50 条
  • [31] CDS SELF-ELECTRO-OPTIC EFFECT DEVICE
    WEGENER, M
    WITT, A
    KLINGSHIRN, C
    GNASS, D
    IYECHIKA, Y
    JAGER, D
    JOURNAL DE PHYSIQUE, 1988, 49 (C-2): : 109 - 112
  • [33] Optical threshold logic analog-to-digital converters using self electro-optic effect devices
    Sarros, T
    Al-Sarawi, SF
    Celinski, P
    Corbett, KA
    Smart Structures, Devices, and Systems II, Pt 1 and 2, 2005, 5649 : 227 - 236
  • [34] Quadratic electro-optic Kerr effect: Applications to photonic devices
    Qasymeh, Montasir
    Cada, Michael
    Ponomarenko, Sergey A.
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2008, 44 (7-8) : 740 - 746
  • [35] Preparation of the ZnCdSe-ZnSe self electro-optic effect device and electro-optic modulation
    Zheng, Zhuhong
    Zhang, Jiying
    Yang, Baojun
    Fan, Xiwu
    Guangdian Gongcheng/Opto-Electronic Engineering, 1996, 23 (04): : 199 - 201
  • [36] Design optimization of self electro-optic effect device
    Paul, BC
    Satyam, M
    Salvarajan, A
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 188 - 191
  • [37] Fabrication and characterization of high-speed integrated electro-optic lens and scanner devices
    Gahagan, KT
    Gopalan, V
    Robinson, JM
    Jia, QX
    Mitchell, TE
    Kawas, MJ
    Schlesinger, TE
    Stancil, DD
    INTEGRATED OPTICS DEVICES III, 1999, 3620 : 374 - 379
  • [38] On relationships between electro-optic coefficients for impermeability and nonlinear electric susceptibilities
    Izdebski, M
    Kucharczyk, W
    Raab, RE
    JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS, 2004, 6 (04): : 421 - 424
  • [39] TRANSMISSION SELF-ELECTRO-OPTIC EFFECT DEVICES BASED ON WANNIER-STARK LOCALIZATION IN A GAAS ALAS SUPERLATTICE
    KAWASHIMA, K
    FUJIWARA, K
    YAMAMOTO, T
    KOBAYASHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (9A): : 2682 - 2686
  • [40] Transmission self-electro-optic effect devices based on Wannier-Stark localization in a GaAs/AlAs superlattice
    Kawashima, Kenji
    Fujiwara, Kenzo
    Yamamoto, Teiji
    Kobayashi, Kikuo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (9 A): : 2682 - 2686