ELECTRICAL AND STRUCTURAL-PROPERTIES OF SI/CRSI2/SI HETEROSTRUCTURES FABRICATED USING ION-IMPLANTATION

Using high dose implantation of Cr+ into (111)-oriented Si, followed by annealing, we have created continuous, buried layers of CrSi 2 in Si. The layers are stoichiometric and epitaxially aligned along one of the substrate 〈111〉 directions. Results of temperature- dependent resistivity and Hall measurements on the early layers show that they are p-type degenerate semiconductors consistent with data for bulk samples. More recent layers appear to be single crystal with [0001] parallel to [111] and are n type with lower carrier density.