ELECTROLUMINESCENCE OF VARIABLE-GAP GA1-XALXSB P-N STRUCTURES

被引：0
|
作者：
IMENKOV, AN
LIDEIKIS, TP
TSARENKOV, BV
SHERNYAKOV, YM
YAKOVLEV, YP
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1977年 / 11卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1038 / 1040
页数：3
相关论文
共 50 条
  • [21] SUPERINJECTION OF CARRIERS IN VARIABLE-GAP P - N STRUCTURES.
    Kazarinov, R.F.
    Suris, R.A.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 9 (01): : 6 - 10
  • [22] PHONONS IN MIXED GA1-XALXSB CRYSTAL
    AHUJA, G
    GUPTA, HC
    TIWARI, LM
    PHYSICA B & C, 1984, 124 (02): : 225 - 230
  • [23] RESONANT ENHANCEMENT OF IMPACT IN GA1-XALXSB
    HILDEBRAND, O
    KUEBART, W
    PILKUHN, MH
    APPLIED PHYSICS LETTERS, 1980, 37 (09) : 801 - 803
  • [24] Alloy dependence of the carrier concentration and negative persistant photoconductivity in Ga1-xAlxSb/InAs/Ga1-xAlxSb single quantum wells
    Bardeleben, H.J.von
    Manasreh, M.O.
    Stutz, C.E.
    Materials Science Forum, 1994, 143-4 (pt 1) : 611 - 616
  • [25] SPECTRAL DEPENDENCE OF THE AVALANCHE MULTIPLICATION COEFFICIENT OF A VARIABLE-GAP P-N STRUCTURE
    BARANOV, AN
    DANILOVA, TN
    IMENKOV, AN
    TSARENKOV, BV
    SHERNYAKOV, YM
    YAKOVLEV, YP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (04): : 473 - 474
  • [26] IMPACT IONIZATION IN GA1-XALXSB - AN ALTERNATIVE INTERPRETATION
    KASEMSET, D
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (09) : 1595 - 1597
  • [27] PHOTOEMISSION SPECTRA OF TERNARY ALLOY GA1-XALXSB
    ANCE, C
    AMAMOU, A
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 103 (01): : 441 - 449
  • [28] EPITAXIS OF GA1-XALXSB IN LIQUID-PHASE
    VANMAU, N
    GOUSKOV, A
    AVEROUS, M
    BOUGNOT, G
    COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE B, 1974, 278 (01): : 15 - 17
  • [29] ELECTROLUMINESCENCE OF EPITAXIAL GAP P-N STRUCTURES GROWN ON SI SUBSTRATES
    EVSTROPOV, VV
    ZHILYAEV, YV
    NAZAROV, N
    SERGEEV, DV
    FEDOROV, LM
    SEMICONDUCTORS, 1993, 27 (04) : 369 - 371
  • [30] PHOTOELECTRIC PROPERTIES OF VARIABLE-GAP AU-GA1-XAIXAS STRUCTURES
    BYVALYI, VA
    VOLKOV, AS
    GOLDBERG, YA
    DMITRIEV, AG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (05): : 579 - 581
12345