共 50 条
- [1] VARIABLE-GAP GA1-XALXSB P-N STRUCTURES AND THEIR PROPERTIES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 748 - 751
- [3] WIDEBAND PHOTO-ELECTRIC EFFECT IN VARIABLE-GAP GA1-XALXSB P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (07): : 835 - 837
- [4] PHOTOSENSITIVITY SPECTRA OF VARIABLE-GAP GA1-XALXP P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (01): : 79 - 81
- [5] SELECTIVE PHOTOELECTRIC EFFECT IN VARIABLE-GAP GA1-XAIXSB P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 155 - 157
- [6] SUPERINJECTION OF CARRIERS IN VARIABLE-GAP P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 6 - 10
- [7] RECOMBINATION CURRENTS IN VARIABLE-GAP P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (06): : 685 - 686
- [8] SELECTIVE PHOTOCELLS BASED ON VARIABLE-GAP GA1-XALXAS-SI P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (07): : 954 - 955
- [9] VARIABLE-GAP SELECTIVE PHOTOCELLS BASED ON GA1-XALXAS-GE-TE P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (08): : 979 - 980
- [10] QUANTUM EFFICIENCY OF PLASTICALLY AND ELASTICALLY DEFORMED VARIABLE-GAP GA1-XALXP P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (12): : 1388 - 1390