THE ELECTRICAL-PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS

被引：21

作者：

OURMAZD, A ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,DEPT ELECTR,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

来源：

CONTEMPORARY PHYSICS | 1984年 / 25卷 / 03期

关键词：

D O I：

10.1080/00107518408210707

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：251 / 268

页数：18

共 50 条

[1] ELECTRICAL-PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
FIGIELSKI, T
[J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1978, 34 : S248 - S248
[2] STRUCTURE AND ELECTRICAL-PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
HIRSCH, PB
[J]. JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN): : 3 - 12
[3] THE ELECTRICAL PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
BROUDY, RM
[J]. ADVANCES IN PHYSICS, 1963, 12 (46) : 135 - 184
[4] INFLUENCE OF DISLOCATIONS ON ELECTRICAL-PROPERTIES OF ANTHRACENE
LITVINENKO, VY
PUSHKAREVA, AI
KOZHUKHOVA, OI
[J]. KRISTALLOGRAFIYA, 1976, 21 (04): : 850 - 852
[5] INTERPRETATION OF ELECTRICAL-PROPERTIES OF LIQUID SEMICONDUCTORS
HODGKINSON, RJ
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (08): : 1467 - 1482
[6] ELECTRICAL-PROPERTIES OF SOME MOLTEN TERNARY SEMICONDUCTORS
NAKAMURA, Y
NAOI, M
SHIMOJI, M
[J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1977, 55 (11): : 1975 - 1978
[7] SEM CHARACTERIZATION OF ELECTRICAL-PROPERTIES OF DEFECTS IN SEMICONDUCTORS
KIMERLING, LC
[J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1977, 174 (SEP): : 123 - 123
[8] ELECTRICAL-PROPERTIES OF DISLOCATIONS IN ULTRA-PURE GERMANIUM
HUBBARD, GS
HALLER, EE
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 711 - 711
[9] ELECTRICAL-PROPERTIES OF DISLOCATIONS IN ULTRA-PURE GERMANIUM
HUBBARD, GS
HALLER, EE
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (01) : 51 - 66
[10] ELECTRICAL-PROPERTIES OF OPTICAL CONTACTS BETWEEN LAYER SEMICONDUCTORS
BAKUMENKO, VL
CHISHKO, VF
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (10): : 1171 - 1172

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