ELECTRICAL-PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS

被引：0

作者：

FIGIELSKI, T ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS,WARSAW 42,POLAND

来源：

ACTA CRYSTALLOGRAPHICA SECTION A | 1978年 / 34卷

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：S248 / S248

页数：1

共 50 条

[1] THE ELECTRICAL-PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
OURMAZD, A
[J]. CONTEMPORARY PHYSICS, 1984, 25 (03) : 251 - 268
[2] STRUCTURE AND ELECTRICAL-PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
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[J]. JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN): : 3 - 12
[3] THE ELECTRICAL PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
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[J]. ADVANCES IN PHYSICS, 1963, 12 (46) : 135 - 184
[4] INFLUENCE OF DISLOCATIONS ON ELECTRICAL-PROPERTIES OF ANTHRACENE
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[J]. KRISTALLOGRAFIYA, 1976, 21 (04): : 850 - 852
[5] INTERPRETATION OF ELECTRICAL-PROPERTIES OF LIQUID SEMICONDUCTORS
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (08): : 1467 - 1482
[6] ELECTRICAL-PROPERTIES OF SOME MOLTEN TERNARY SEMICONDUCTORS
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NAOI, M
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[J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1977, 55 (11): : 1975 - 1978
[7] SEM CHARACTERIZATION OF ELECTRICAL-PROPERTIES OF DEFECTS IN SEMICONDUCTORS
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[J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1977, 174 (SEP): : 123 - 123
[8] ELECTRICAL-PROPERTIES OF DISLOCATIONS IN ULTRA-PURE GERMANIUM
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 711 - 711
[9] ELECTRICAL-PROPERTIES OF DISLOCATIONS IN ULTRA-PURE GERMANIUM
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (01) : 51 - 66
[10] ELECTRICAL-PROPERTIES OF OPTICAL CONTACTS BETWEEN LAYER SEMICONDUCTORS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (10): : 1171 - 1172

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