A MECHANISTIC STUDY OF SF6/O2 REACTIVE ION ETCHING OF MOLYBDENUM

被引:23
|
作者
PARK, SJ
SUN, CP
PURTELL, RJ
机构
来源
关键词
D O I
10.1116/1.583618
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1372 / 1373
页数:2
相关论文
共 50 条
  • [31] EFFECTS OF O2 AND SF6 ON THE ANISOTROPIC ETCHING OF POLYSILICON.
    Nguyen, Minh
    [J]. Semiconductor International, 1986, 9 (05) : 110 - 113
  • [32] SF6 Optimized O2 Plasma Etching of Parylene C
    Zhang, Lingqian
    Liu, Yaoping
    Li, Zhihong
    Wang, Wei
    [J]. MICROMACHINES, 2018, 9 (04):
  • [33] Effects of SF6 addition to O2 plasma on polyimide etching
    Kim, SH
    Woo, SG
    Ahn, JH
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (12B): : 7011 - 7014
  • [34] Cr and CrOx etching using SF6 and O2 plasma
    Hoang Nguyen, Vy Thi
    Jensen, Flemming
    Hubner, Jorg
    Shkondin, Evgeniy
    Cork, Roy
    Ma, Kechun
    Leussink, Pele
    De Malsche, Wim
    Jansen, Henri
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021, 39 (03):
  • [35] Etching of tungsten in a dual frequency SF6/O2 plasma
    Jaiprakash, VC
    Thompson, BE
    [J]. PLASMA PROCESSING XII, 1998, 98 (04): : 231 - 241
  • [36] Etching of high aspect ratio features in Si using SF6/O2/HBr and SF6/O2/Cl2 plasma
    Gomez, S
    Belen, RJ
    Kiehlbauch, M
    Aydil, ES
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (06): : 1592 - 1597
  • [37] Reactive ion etching of GaN layers using SF6
    Basak, D
    Verdu, M
    Montojo, MT
    SanchezGarcia, MA
    Sanchez, FJ
    Munoz, E
    Calleja, E
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (12) : 1654 - 1657
  • [38] REACTIVE ION ETCHING IN SF6 GAS-MIXTURES
    PINTO, R
    RAMANATHAN, KV
    BABU, RS
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (01) : 165 - 175
  • [39] MODELING AND EXPERIMENTAL STUDIES OF A REACTIVE ION ETCHER USING SF6/O2 CHEMISTRY
    KOPALIDIS, PM
    JORNE, J
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (10) : 3037 - 3045
  • [40] PHOTOLUMINESCENCE OF DEFECTS INDUCED IN SILICON BY SF6/O-2 REACTIVE-ION ETCHING
    BUYANOVA, IA
    HENRY, A
    MONEMAR, B
    LINDSTROM, JL
    OEHRLEIN, GS
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (05) : 3348 - 3352