共 50 条
- [41] EXTREME NONEQUILIBRIUM ELECTRON-TRANSPORT IN HETEROJUNCTION BIPOLAR-TRANSISTORS[J]. APPLIED PHYSICS LETTERS, 1988, 52 (26) : 2247 - 2249BERTHOLD, KLEVI, AFJWALKER, JMALIK, RJ
- [42] AN ALGAAS/GAAS HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTOR[J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (06) : 264 - 266WU, XWANG, YQLUO, LFYANG, ES
- [43] ELECTRON-TRANSPORT THROUGH THE MOCVD GROWN GAAS/ALGAAS/GAAS HETEROJUNCTION BARRIER[J]. ELECTRONICS LETTERS, 1984, 20 (12) : 491 - 492HASE, IKAWAI, HKANEKO, KWATANABE, N
- [44] ELECTRON SATURATION VELOCITY IN GA0.5INP0.5INP0.5P MEASURED IN A GALNP/GAAS/GALNP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR[J]. ELECTRONICS LETTERS, 1993, 29 (21) : 1885 - 1887LIU, WHENDERSON, TFAN, SK
- [45] BASE TRANSPORT DYNAMICS IN A HETEROJUNCTION BIPOLAR-TRANSISTOR[J]. APPLIED PHYSICS LETTERS, 1986, 49 (21) : 1481 - 1483HAYES, JRLEVI, AFJGOSSARD, ACENGLISH, JH
- [47] DYNAMIC PROPERTIES OF AN ALGAAS/GAAS DOUBLE-HETEROJUNCTION THYRISTOR[J]. SOLID-STATE ELECTRONICS, 1993, 36 (08) : 1225 - 1227WILLEN, B
- [48] A 2-DIMENSIONAL ELECTRON-GAS EMITTER ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH LOW OFFSET VOLTAGE[J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 311 - 315WANG, YWANG, QLONGENBACH, KFYANG, ESWANG, WI
- [49] A STUDY AND OPTOELECTRONIC VERIFICATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR LARGE-SIGNAL CHARACTERISTICS[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (11) : 2799 - 2804FRANKEL, MYPAVLIDIS, DMOUROU, GA
- [50] GAALAS-GAAS HETEROJUNCTION MICROWAVE BIPOLAR-TRANSISTOR[J]. ELECTRONICS LETTERS, 1981, 17 (08) : 301 - 302BENEKING, HSU, LM