A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors

被引：7

作者：

Yang Liyuan ^{[1
]}

Ai Shan ^{[1
]}

Chen Yonghe ^{[1
]}

Cao Mengyi ^{[1
]}

Zhang Kai ^{[1
]}

Ma Xiaohua ^{[1
,2
]}

Hao Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

[2] Xidian Univ, Sch Tech Phys, Xian 710071, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2013年 / 34卷 / 07期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN high electron mobility transistors; electro-thermal simulation; Raman spectroscopy; channel temperature;

D O I：

10.1088/1674-4926/34/7/074005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Self-heating in multi-finger AlGaN/GaN high-electron-mobility transistors (HEMTs) is investigated by measurements and modeling of device junction temperature under steady-state operation. Measurements are carried out using micro-Raman scattering to obtain the detailed and accurate temperature distribution of the device. The device peak temperature corresponds to the high field region at the drain side of gate edge. The channel temperature of the device is modeled using a combined electro-thermal model considering 2DEG transport characteristics and the Joule heating power distribution. The results reveal excellent correlation to the micro-Raman measurements, validating our model for the design of better cooled structures. Furthermore, the influence of layout design on the channel temperature of multi-finger AlGaN/GaN HEMTs is studied using the proposed electro-thermal model, allowing for device optimization.

引用

页数：5

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