THE ROLE OF DEEP-LEVEL CENTERS AND COMPENSATION IN PRODUCING SEMI-INSULATING GAAS

被引：49
|
作者：
JOHNSON, EJ
KAFALAS, JA
DAVIES, RW
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 01期
关键词：
D O I：
10.1063/1.331742
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：204 / 207
页数：4
相关论文
共 50 条
  • [21] DEFECTS RELEVANT TO COMPENSATION IN SEMI-INSULATING GAAS
    WEBER, ER
    KAMINSKA, M
    [J]. SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 111 - 118
  • [22] Deep-level characterization in semi-insulating GaAs by photo-induced current and Hall effect transient spectroscopy
    K YASUTAKE
    H KAKIUCHI
    A TAKEUCHI
    K YOSHII
    H KAWABE
    [J]. Journal of Materials Science: Materials in Electronics, 1997, 8 : 239 - 245
  • [23] COMPENSATION MECHANISM IN SEMI-INSULATING GAAS - THE ROLE OF INTRINSIC ACCEPTOR DEFECTS
    VONBARDELEBEN, HJ
    BOURGOIN, JC
    STIEVENARD, D
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (12) : 1089 - 1091
  • [24] Deep-level characterization in semi-insulating GaAs by photo-induced current and Hall effect transient spectroscopy
    Yasutake, K
    Kakiuchi, H
    Takeuchi, A
    Yoshii, K
    Kawabe, H
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1997, 8 (04) : 239 - 245
  • [25] Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transients
    Kaminski, P
    Pawlowski, M
    Cwirko, R
    Palczewska, M
    Kozlowski, R
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 42 (1-3): : 213 - 216
  • [26] Characterisation of deep-level defects in semi-insulating GaAs and InP by high resolution photoinduced transient spectroscopy (HRPITS)
    Kaminski, P
    Pawlowski, M
    Cwirko, R
    Palczewska, M
    Kozlowski, R
    [J]. SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 141 - 144
  • [27] Deep centers in undoped semi-insulating InP
    Fang, ZQ
    Look, DC
    Uchida, M
    Kainosho, K
    Oda, O
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (10) : L68 - L71
  • [28] Narrow, deep level cathodoluminescence emission from semi-insulating GaAs
    Radhakrishnan, JK
    Salviati, G
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (02) : 197 - 199
  • [29] Deep centers in conductive and semi-insulating GaN
    Fang, ZQ
    Farlow, G
    Claflin, B
    Look, D
    [J]. SMIC-XIII: 2004 13TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, 2004, : 29 - 36
  • [30] Deep centers in undoped semi-insulating InP
    Z. -Q. Fang
    D. C. Look
    M. Uchida
    K. Kainosho
    O. Oda
    [J]. Journal of Electronic Materials, 1998, 27 : L68 - L71
12345