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- [1] ANISOTROPIC-PLASMA ETCHING OF POLYSILICONJOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03): : 721 - 730MOGAB, CJLEVINSTEIN, HJ
- [2] ANISOTROPIC-PLASMA ETCHING OF POLYSILICONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C105 - C105KOIKE, AIMAI, KHOSODA, STOMOZAWA, AAGATSUMA, T
- [3] THE ATTACHMENT RATE FOR THERMAL ELECTRONS TO SF6 AND CFCL3JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 1982, 15 (13) : L483 - L484CROMPTON, RWHADDAD, GNHEGERBERG, RROBERTSON, AG
- [4] THERMAL ELECTRON-ATTACHMENT TO SF6 AND CFCL3AUSTRALIAN JOURNAL OF PHYSICS, 1983, 36 (01): : 15 - 25CROMPTON, RWHADDAD, GN
- [5] ANISOTROPIC AND SELECTIVE REACTIVE ION ETCHING OF POLYSILICON USING SF6JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1403 - 1407PARRENS, P
- [6] Anisotropic etching of silicon in SF6 plasmaVACUUM, 2004, 77 (01) : 1 - 4Knizikevicius, RKopustinskas, V
- [7] ANISOTROPIC-PLASMA ETCHING OF POLYSILICON WITH CF4JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C88 - C88MADER, H
- [8] EFFECTS OF O2 AND SF6 ON THE ANISOTROPIC ETCHING OF POLYSILICON.Semiconductor International, 1986, 9 (05) : 110 - 113Nguyen, Minh
- [9] ANISOTROPIC ETCHING OF SILICON USING AN SF6/AR MICROWAVE MULTIPOLAR PLASMAJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 1 - 5POMOT, CMAHI, BPETIT, BARNAL, YPELLETIER, J
- [10] ANISOTROPIC ETCHING OF SILICON IN SF6 PLASMAS - A MODEL FOR PLASMA-ETCHINGREVUE DE PHYSIQUE APPLIQUEE, 1986, 21 (06): : 377 - 399PETIT, BPELLETIER, J