AU/GAAS INTERFACE ANNEALING STUDY BY POSITRON-LIFETIME SPECTROSCOPY

被引：3

作者：

SHAN, YY ^{[1
]}

PANDA, BK ^{[1
]}

FUNG, S ^{[1
]}

BELING, CD ^{[1
]}

WANG, YY ^{[1
]}

机构：

[1] INST HIGH ENERGY PHYS, BEIJING, PEOPLES R CHINA

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.52.4724

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Structural changes of annealed Au contacts on semi-insulating GaAs have been observed by conventional positron lifetime-spectroscopy in which a significant fraction of positrons are drifted from a Na-22 source to the contact by an electric field. For annealing temperatures below 200 degrees C it is found that the interface traps positrons into microvoids with a characteristic positron lifetime of 380+/-10 ps. For annealing in the range of 300 degrees C-400 degrees C a 150+/-20 ps additional component appears in the lifetime spectra that is attributed to positrons annihilating from AuGa phases at the interface. The most likely explanation for this sudden onset of the positron component in the AuGa phases is that the changes in the Gabs near surface electron chemical potential, brought about by annealing, affect the interfacial dipole in such a way as to allow a favorable potential barrier for positron penetration into the metallic phase.

引用

页码：4724 / 4727

页数：4

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