A MONTE-CARLO STUDY OF MANY-VALLEY EFFECTS ON THE TEMPORAL ELECTRON TRANSIENT TRANSPORT IN SILICON

被引：4
|
作者：
CHEN, RY
PAN, DS
机构：
[1] Electrical Engineering Department, University of California at Los Angeles, Los Angeles
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 09期
关键词：
D O I：
10.1063/1.349040
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Six-valley effects on electron transient transport in silicon (Si) are investigated by temporal Monte Carlo simulations. The effects on velocity overshoot, carrier repopulation, and average electron energy are studied using two well-known models of Si. Substantial differences in transient carrier repopulation and average energy are found using the two models. For transient carrier velocity, the two models give essentially the same response. A simple one-valley model for Si with optimized parameters is presented for saving computer time when accuracy is not strictly demanded. The significance of these results is discussed.
引用
收藏
页码：4938 / 4945
页数：8
相关论文
共 50 条
  • [21] A Monte Carlo study of electron transport in silicon nMOSFET inversion layers
    Shih, WK
    Jallepalli, S
    Yeap, CF
    Rashed, M
    Maziar, CM
    Tasch, AF
    VLSI DESIGN, 1998, 6 (1-4) : 53 - 56
  • [22] ENSEMBLE MONTE-CARLO STUDY OF ELECTRON-TRANSPORT IN DEGENERATE BULK GAAS
    MANSOUR, NS
    DIFF, K
    BRENNAN, KF
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (11) : 6854 - 6859
  • [23] A MONTE-CARLO STUDY FOR MINORITY-ELECTRON TRANSPORT IN P-GAAS
    TANIYAMA, H
    TOMIZAWA, M
    FURUTA, T
    YOSHII, A
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (02) : 621 - 626
  • [24] ELECTRON-ELECTRON EXCHANGE IN MANY-VALLEY SEMICONDUCTORS AND THE FINE-STRUCTURE OF MANY-EXCITON COMPLEXES IN SILICON
    PIKUS, GE
    AVERKIEV, NS
    JETP LETTERS, 1981, 34 (01) : 26 - 29
  • [25] ONE-DIMENSIONAL MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SUBMICROMETER SILICON STRUCTURES
    MARTIN, MJ
    GONZALEZ, T
    PARDO, D
    VELAZQUEZ, JE
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (07) : 1316 - 1323
  • [26] Electron Dynamics in Silicon Nanowire using a Monte-Carlo Method
    Sarrazin, E.
    Barraud, S.
    Bournel, A.
    Triozon, F.
    16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 2009, 193
  • [27] A NOVEL-APPROACH FOR INCLUDING BAND-STRUCTURE EFFECTS IN A MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT IN SILICON
    VOGELSANG, T
    HANSCH, W
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) : 1493 - 1499
  • [28] QUANTUM MONTE-CARLO - EXACT TREATMENT OF MANY-ELECTRON SYSTEMS
    ANDERSON, JB
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1992, 204 : 59 - PHYS
  • [29] HOT-ELECTRON TRANSPORT FOR MANY-VALLEY SEMICONDUCTORS BY THE METHOD OF NONEQUILIBRIUM STATISTICAL OPERATORS
    LIU, M
    XING, DY
    TING, CS
    XU, WT
    PHYSICAL REVIEW B, 1988, 37 (06): : 2997 - 3007
  • [30] Monte Carlo simulation of electron transport in silicon carbide
    Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
    Gongneng Cailiao, 2007, 4 (542-545):
12345