CESIUM PROFILES IN SILICON AND IN SIO2-SI DOUBLE-LAYERS AS DETERMINED BY SIMS MEASUREMENTS

被引：15
|
作者：
HURRLE, A [1 ]
SIXT, G [1 ]
机构：
[1] FRAUNHOFER GESELL,INST ANGEW FESTKORPER PHYS,D-7800 FREIBURG,FED REP GER
来源：
APPLIED PHYSICS | 1975年 / 8卷 / 04期
关键词：
D O I：
10.1007/BF00898362
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：293 / 302
页数：10
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