TRANSIENT CAPACITANCE MEASUREMENTS OF ELECTRONIC STATES AT SIO2-SI INTERFACE

被引：0

|

作者：

JOHNSON, NM

BARTELINK, DJ

SCHULZ, M

机构：

[1] INST APPL SOLID STATE PHYS,FREIBURG,FED REP GER

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1978年 / 23卷 / 03期

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D O I：

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中图分类号：

O4 [物理学];

学科分类号：

0702 ;

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页码：458 / 458

页数：1

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