TRANSIENT CAPACITANCE MEASUREMENTS OF ELECTRONIC STATES AT SIO2-SI INTERFACE

被引：0
|
作者：
JOHNSON, NM
BARTELINK, DJ
SCHULZ, M
机构：
[1] INST APPL SOLID STATE PHYS,FREIBURG,FED REP GER
[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1978年 / 23卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：458 / 458
页数：1
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