WAVELENGTH TUNABLE 2-PAD RIDGE-WAVE-GUIDE DISTRIBUTED-BRAGG-REFLECTOR INGAAS-GAAS QUANTUM-WELL LASERS

被引：12
|
作者：
SMITH, GM
HUGHES, JS
LAMMERT, RM
OSOWSKI, ML
COLEMAN, JJ
机构：
[1] Microelctronics Laboratory University of Illinois, Urbana, IL 61801
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 16期
关键词：
SEMICONDUCTOR QUANTUM WELLS; DISTRIBUTED BRAGG REFLECTOR LASERS;
D O I：
10.1049/el:19940916
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Carrier injection in the grating section is used to tune the emission wavelength of a single growth step, single frequency, ridge waveguide InGaAs/GaAs quantum well distributed. Bragg reflector laser with two top contacts. Single longitudinal mode emission with over 30dB of sidemode suppression is observed throughout a tuning range of 6 nm with 60 mA of injection current to the grating section. The tuning mechanism for these devices is dominated by current injection heating rather than carrier depression of the refractive index.
引用
收藏
页码：1313 / 1314
页数：2
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