Dual-wavelength asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers

被引：13
|
作者：
Roh, SD [1 ]
Swint, RB [1 ]
Jones, AM [1 ]
Yeoh, TS [1 ]
Huber, AE [1 ]
Hughes, JS [1 ]
Coleman, JJ [1 ]
机构：
[1] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 01期
基金：
美国国家科学基金会;
关键词：
distributed Bragg reflector lasers; gratings; quantum-well lasers; ridge waveguides; semiconductor lasers;
D O I：
10.1109/68.736375
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design and operation of dual-wavelength InGaAs-GaAs asymmetric cladding ridge waveguide distributed Bragg reflector (DBR) lasers are reported. DBR lasers with mode pair separations of 4.1, 8.4, and 16.9 nm exhibit stable, simultaneous, dual-wavelength operation in current ranges of 40-52 mA, 32-42 mA, and 28-35 mA, respectively. Within the stated current ranges, all lasing modes exhibit at least 20-dB sidemode suppression, and approximately 30-dB sidemode suppression under optimum operating conditions.
引用
收藏
页码：15 / 17
页数：3
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