CHEMICAL VAPOR-DEPOSITION OF REFRACTORY-METAL SILICIDES FOR VLSI METALLIZATION

被引：0
|
作者：
BERNARD, C
MADAR, R
PAULEAU, Y
机构：
[1] CNRS,F-38042 GRENOBLE,FRANCE
[2] FRENCH TELECOMMUN RES CTR,MEYLAN,FRANCE
来源：
SOLID STATE TECHNOLOGY | 1989年 / 32卷 / 02期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：79 / 84
页数：6
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