MECHANISMS OF SILICON ETCHING IN FLUORINE-CONTAINING AND CHLORINE-CONTAINING PLASMAS

被引：82

作者：

FLAMM, DL

机构：

[1] Department of Electrical Engineering, University of California., Berkeley

来源：

PURE AND APPLIED CHEMISTRY | 1990年 / 62卷 / 09期

关键词：

D O I：

10.1351/pac199062091709

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Silicon can be etched in fluorine- and chlorine- containing plasmas in many ways. This article discusses some of the basic chemical and physical phenomena which play a role and more complicated interactions and side effects found in commercial process equipment. © 1990 IUPAC

引用

页码：1709 / 1720

页数：12

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