ANISOTROPIC ETCHING IN CHLORINE-CONTAINING PLASMAS.

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Donnelly, Vincent M.
Flamm, Daniel L.
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| 1600年 / 24期
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Current theories of anisotropic plasma etching of semiconductor materials are reviewed, with emphasis on chlorine-containing plasmas. Manipulation of pressure, applied frequency and mixture chemistry for etch rate and profile control are analyzed. Some examples illustrate the use of these parameters to obtain desirable etch rates, profiles and selectivity with Si, Al, and III-V compounds.
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