Anomalous Stress-Induced Hump Effects in Amorphous Indium Gallium Zinc Oxide TFTs

被引：18

作者：

Kim, Yu-Mi ^{[1
]}

Jeong, Kwang-Seok ^{[1
]}

Yun, Ho-Jin ^{[1
]}

Yang, Seung-Dong ^{[1
]}

Lee, Sang-Youl ^{[1
]}

Lee, Hi-Deok ^{[1
]}

Lee, Ga-Won ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Elect Engn, Taejon 305764, South Korea

来源：

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2012年 / 13卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

IGZO; Anomalous hump; Bias stress; NBS; PBS; Thin film transistor (TFT);

D O I：

10.4313/TEEM.2012.13.1.47

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we investigated the anomalous hump in the bottom gate staggered a-IGZO TFTs. During the positive bias stress, a positive threshold voltage shift was observed in the transfer curve and an anomalous hump occurred as the stress time increased. The hump became more serious in higher gate bias stress while it was not observed under the negative bias stress. The analysis of constant gate bias stress indicated that the anomalous hump was influenced by the migration of positively charged mobile interstitial zinc ion towards the top side of the a-IGZO channel layer.

引用

页码：47 / 49

页数：3

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