INSITU STUDIES OF ION IRRADIATION EFFECTS IN AN ELECTRON-MICROSCOPE

被引：28
|
作者：
VETRANO, JS [1 ]
BENCH, MW [1 ]
ROBERTSON, IM [1 ]
KIRK, MA [1 ]
机构：
[1] ARGONNE NATL LAB,DIV MAT SCI,ARGONNE,IL 60439
来源：
METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE | 1989年 / 20卷 / 12期
关键词：
D O I：
10.1007/BF02670160
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2673 / 2680
页数：8
相关论文
共 50 条
  • [21] DIRECT OBSERVATION OF CASCADE DEFECTS BY INSITU HEAVY-ION ELECTRON-MICROSCOPE INTERFACE
    ISHINO, S
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1990, 113 (1-3): : 29 - 37
  • [22] STUDIES OF IRRADIATION DAMAGE USING A HIGH-VOLTAGE ELECTRON-MICROSCOPE
    HOSSAIN, MK
    BROWN, LM
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 31 (04): : 203 - 211
  • [23] ELECTRON-MICROSCOPE STUDIES OF FRACTURE
    OHR, SM
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 371 - 371
  • [24] INSITU INTERCALATION OF TAS2 IN ELECTRON-MICROSCOPE
    TATLOCK, GJ
    ACRIVOS, JV
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (01): : 81 - 93
  • [25] PRINCIPAL OF A SCANNING ELECTRON-MICROSCOPE FUNCTIONING INSITU - MEBIS
    FRANCESCHI, JL
    TRINQUIER, J
    JOUFFREY, B
    [J]. JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES, 1982, 7 (02): : A2 - A2
  • [26] INSITU OXIDATION OF IRON AND STEEL IN SCANNING ELECTRON-MICROSCOPE
    CASTLE, JE
    HUNT, MR
    [J]. CORROSION SCIENCE, 1976, 16 (03) : 137 - &
  • [27] TRANSMISSION ELECTRON-MICROSCOPE STUDY OF EFFECTS OF ION ETCHING ON CELLS
    FRISCH, B
    LEWIS, SM
    STUART, PR
    OSBORN, JS
    [J]. JOURNAL OF MICROSCOPY, 1975, 104 (AUG) : 219 - 233
  • [28] INSITU DEFORMATION STUDIES OF AN ALUMINUM METAL-MATRIX COMPOSITE IN A SCANNING ELECTRON-MICROSCOPE
    MANOHARAN, M
    LEWANDOWSKI, JJ
    [J]. SCRIPTA METALLURGICA, 1989, 23 (10): : 1801 - 1804
  • [29] RESULTS OF INSITU ANNEALING OF ION-IMPLANTED SILICON IN A HIGH-VOLTAGE ELECTRON-MICROSCOPE
    HOEHL, D
    BARTSCH, H
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 112 (01): : 419 - 424
  • [30] INSITU ANNEALING OF ION-IMPLANTED SILICON IN A HIGH-VOLTAGE ELECTRON-MICROSCOPE (HVEM)
    HOEHL, D
    [J]. EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 265 - 267
12345