LOW-THRESHOLD MBE GAAS/ALGAAS QUANTUM WELL LASERS WITH DRY-ETCHED MIRRORS

被引：14
|
作者：
MANNOH, M [1 ]
YUASA, T [1 ]
ASAKAWA, K [1 ]
SHINOZAKI, K [1 ]
ISHII, M [1 ]
机构：
[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
来源：
ELECTRONICS LETTERS | 1985年 / 21卷 / 17期
关键词：
D O I：
10.1049/el:19850542
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：769 / 770
页数：2
相关论文
共 50 条
  • [21] LOW-THRESHOLD OPERATION OF ALGAAS/GAAS MULTIPLE QUANTUM-WELL LASERS GROWN ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    CHONG, TC
    FONSTAD, CG
    APPLIED PHYSICS LETTERS, 1987, 51 (04) : 221 - 223
  • [22] LOW-THRESHOLD GAAS/ALGAAS QUANTUM-WELL LASERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY USING TRIMETHYLAMINE ALANE
    HOBSON, WS
    VANDERZIEL, JP
    LEVI, AFJ
    OGORMAN, J
    ABERNATHY, CR
    GEVA, M
    LUTHER, LC
    SWAMINATHAN, V
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) : 432 - 435
  • [23] FABRICATION OF LOW-THRESHOLD ALGAAS/GAAS PATTERNED QUANTUM-WELL LASER GROWN ON SI SUBSTRATE
    HASEGAWA, Y
    EGAWA, T
    JIMBO, T
    UMENO, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (7B): : L997 - L999
  • [24] HIGH QUANTUM EFFICIENCY MONOLITHIC ARRAYS OF SURFACE-EMITTING ALGAAS DIODE-LASERS WITH DRY-ETCHED VERTICAL FACETS AND PARABOLIC DEFLECTING MIRRORS
    DONNELLY, JP
    GOODHUE, WD
    BAILEY, RJ
    LINCOLN, GA
    WANG, CA
    JOHNSON, GD
    APPLIED PHYSICS LETTERS, 1992, 61 (13) : 1487 - 1489
  • [25] MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates
    Maleev, NA
    Kovsh, AR
    Zhukov, AE
    Mikhrin, SS
    Vasilev, AP
    Semenova, ES
    Shernyakov, YM
    Nikitina, EV
    Kryjanovskaya, NV
    Sizov, DS
    Soshnikov, IP
    Maximov, MV
    Ledentsov, NN
    Ustinov, VM
    Bimberg, D
    Alferov, ZI
    10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, 2003, 5023 : 357 - 360
  • [26] LOW THRESHOLD GAAS/GAALAS BH LASERS WITH ION-BEAM-ETCHED MIRRORS
    BOUADMA, N
    RIOU, J
    KAMPFER, A
    ELECTRONICS LETTERS, 1985, 21 (13) : 566 - 568
  • [27] ROOM TEMPERATURE LOW-THRESHOLD ALGAAS/GAAS MULTIPLE QUANTUM WELL LASERS GROWN DIRECTLY ON SI SUBSTRATES WITH THIN BUFFER LAYERS.
    Chong, Tow C.
    Fonstad, Clifton G.
    IEEE Transactions on Electron Devices, 1987, ED-34 (11)
  • [28] LOW-THRESHOLD INALGAAS/ALGAAS STRAINED-QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    CHYI, JI
    GAU, JH
    SHIEH, JL
    PAN, JW
    CHAN, YJ
    HONG, JW
    HUANG, MF
    SOLID-STATE ELECTRONICS, 1995, 38 (05) : 1105 - 1106
  • [29] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS/ALGAAS QUANTUM WELL LASERS
    BLOOD, P
    COLAK, S
    KUCHARSKA, AI
    APPLIED PHYSICS LETTERS, 1988, 52 (08) : 599 - 601
  • [30] QUANTUM WIRES PREPARED BY LIQUID-PHASE-EPITAXIAL OVERGROWTH OF DRY-ETCHED ALGAAS-GAAS HETEROSTRUCTURES
    HORNISCHER, W
    GRAMBOW, P
    DEMEL, T
    BAUSER, E
    HEITMANN, D
    VONKLITZING, K
    PLOOG, K
    APPLIED PHYSICS LETTERS, 1992, 60 (24) : 2998 - 3000
12345