DIRECT OBSERVATION OF LATTICE DEFECTS IN SILICON BY MEANS OF TRANSMISSION ELECTRON MICROSCOPY

被引：0
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作者：
FORLANI, F
GONDI, P
机构：
来源：
NUOVO CIMENTO | 1962年 / 23卷 / 04期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：931 / +
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