DIFFUSION-INDUCED DEFECTS IN SILICON .2.

被引：34
|
作者：
LEVINE, E
WASHBURN, J
THOMAS, G
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 01期
关键词：
D O I：
10.1063/1.1709016
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：87 / &
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