Proton-Prompted Ligand Exchange to Achieve High-Efficiency CsPbI3 Quantum Dot Light-Emitting Diodes

被引:1
|
作者
Yanming Li [1 ,2 ]
Ming Deng [1 ,2 ,3 ]
Xuanyu Zhang [1 ,2 ,4 ]
Lei Qian [1 ,2 ,5 ]
Chaoyu Xiang [1 ,2 ,5 ]
机构
[1] Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH
[2] Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
[3] Faculty of Electrical Engineering and Computer Science, Ningbo University
[4] University of Nottingham Ningbo China
[5] Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences
基金
中国国家自然科学基金;
关键词
D O I
暂无
中图分类号
TN312.8 [];
学科分类号
0803 ;
摘要
CsPbI3perovskite quantum dots(QDs) are ideal materials for the next generation of red light-emitting diodes. However, the low phase stability of CsPbI3QDs and long-chain insulating capping ligands hinder the improvement of device performance. Traditional in-situ ligand replacement and ligand exchange after synthesis were often difficult to control. Here, we proposed a new ligand exchange strategy using a proton-prompted insitu exchange of short 5-aminopentanoic acid ligands with long-chain oleic acid and oleylamine ligands to obtain stable small-size CsPbI3QDs. This exchange strategy maintained the size and morphology of CsPbI3QDs and improved the optical properties and the conductivity of CsPbI3QDs films. As a result, high-efficiency red QD-based light-emitting diodes with an emission wavelength of 645 nm demonstrated a record maximum external quantum efficiency of 24.45% and an operational half-life of 10.79 h.
引用
收藏
页码:59 / 68
页数:10
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