Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction

被引：0

作者：

Guoliang XU ^{[1
]}

Chao HE ^{[1
]}

Donghong SHI ^{[1
]}

Danmin LIU ^{[2
]}

Wenjie DENG ^{[2
]}

Jingzhen LI ^{[3
]}

Xingtao AN ^{[1
]}

Yongzhe ZHANG ^{[3
]}

机构：

[1] Hebei Provincial Key Laboratory of Photoelectric Control on Surface and Interface,College of Science,Hebei University of Science and Technology

[2] Key Laboratory of Advanced Functional Materials,Ministry of Education,Faculty of Materials and Manufacturing,Beijing University of Technology

[3] Key Laboratory of Optoelectronics Technology,Ministry of Education,Faculty of Information Technology,Beijing University of Technology

来源：

Science China(Information Sciences) | 2024年 / 67卷 / 03期

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TN215 [红外探测、红外探测器];

学科分类号：

0803 ; 080401 ; 080901 ;

摘要：

Excitons play an important role as interconnect in the optical and optoelectronic response and have attracted much attention for understanding the physical matters behind excitons [1, 2]. Excitons in atomically thin transition metal dichalcogenides semiconductors(TMDs) often trap an electron(X-) or a hole(X+) to form so-called trions,

引用

页码：315 / 316

页数：2

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