Nanosized Pd/SnO2 Materials for Semiconductor Hydrogen Sensors

被引:0
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作者
N. P. Maksymovych
G. V. Fedorenko
L. P. Oleksenko
机构
[1] Taras Shevchenko National University of Kyiv,
[2] L. V. Pisarzhevskii Institute of Physical Chemistry,undefined
[3] NAS of Ukraine,undefined
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关键词
Pd/SnO; nanosized materials; semiconductor sensors; hydrogen; sensitivity;
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摘要
To create highly sensitive semiconductor hydrogen sensors, nanosized tin dioxides with particle sizes of 5-6 and 10-11 nm have been obtained by the sol-gel method using various precursors, as well as Pd-doped materials on their base. The maximum sensitivity to the hydrogen microconcentrations has been found for the sensors based on the nanosized ex-oxalate SnO2 containing 0.24% palladium. High sensitivity of the obtained semiconductor sensors is explained by the significant influence of surface processes on their electrical resistance due to the smallest sizes of the SnO2 particles.
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页码:247 / 253
页数:6
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