Impact of Temperature on Analog/RF Performance of Dielectric Pocket Gate-all-around (DPGAA) MOSFETs

被引：0
|
作者：
Himanshi Awasthi
Nitish Kumar
Vaibhav Purwar
Rajeev Gupta
Sarvesh Dubey
机构：
[1] Kanpur Institute of Technology Kanpur,Department of Electronics and Communication Engineering
[2] Rajasthan Technical University,Department of Electronics Engineering
[3] L.N.D. College Motihari (B.R.A. Bihar University),Department of Physics
来源：
Silicon | 2021年 / 13卷
关键词：
Dielectric pocket; Gate-all-around; I; /I; ratio; Analog/RF performance; Temperature-dependent characteristics; OFF current (I; ); And SCEs;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In the present paper, the dielectric pocket (DP) technology has been employed in the Gate-All-Around (GAA) MOSFETs to improve the scalability and performance of the device. The upgraded immunity towards short-channel effects (SCEs) and elevation in the device analog/RF performance is demonstrated through comparison between Gate-All-Around (GAA) and dielectric pocket Gate-All-Around (DPGAA) at the 20 nm channel length with temperature variation from 200 K to 400 K by using the Sentaurus three-dimensional (3D) simulator.
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页码：2071 / 2075
页数：4
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