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- [34] Excitonic photoluminescence quenching by impact ionization of excitons and donors in GaAs/Al0.35Ga0.65As quantum wells with an in-plane electric field PHYSICAL REVIEW B, 2000, 62 (23): : 15871 - 15878
- [36] Transport characterization of Schottky in-plane gate Al0.3Ga0.7As/GaAs quantum wire transistors realized by in-situ electrochemical process JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (12B): : 6971 - 6976