Effect of ionizing irradiation on the mechanism of current passage in TlInSe2 single crystals

被引：0
|
作者：
R. S. Madatov
A. I. Nadzhafov
T. B. Tagiev
M. R. Gazanfarov
M. A. Mekhrabova
机构：
[1] National Academy of Sciences of Azerbaijan,Institute of Radiation Problems
来源：
Physics of the Solid State | 2011年 / 53卷
关键词：
Hole Concentration; Radiation Defect; Strong Electric Field; Neutral Complex; Radiation Induce Defect;
D O I：
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中图分类号：
学科分类号：
摘要：
The temperature dependence of the electrical conductivity and current-voltage characteristics of γ-irradiated TlInSe2 single crystals with an electrical resistivity of ∼108 Ω cm have been investigated. It has been established that the anomalies of the conductivity observed in weak electric fields and at low dozes of irradiation are related to the decomposition of neutral complexes containing an interstitial cation atom. In strong electric fields, a thermal-field ionization of traps occurs. The main mechanism of radiation defect formation is the formation of complexes [VIn−Ini+], [VSe−Sei−], and others with the structural defects characteristic of unirradiated crystals. The activation energy, trap concentrations, and the potential well shape near the traps have been determined.
引用
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页码：2205 / 2209
页数：4
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